Lam Research and imec Prove Dry Resist Ready for High-NA EUV Ruthenium Interconnects
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Summary
Lam Research and imec have achieved 100% electrical yield for ruthenium metal interconnects at 20nm pitch with a single high-NA EUV exposure using Lam's Aether dry resist platform, validating dry resist as a manufacturable solution for angstrom-era AI chip manufacturing and the sub-2nm logic nodes they require.
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